Tag: Appl. Phys. Lett.
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Direct identification of interstitial Mn in heavily p-type doped GaAs and evidence of its high thermal stability
Direct identification of interstitial Mn in heavily p-type doped GaAs and evidence of its high thermal stability Date 2011-05-18 Doi Direct identification of interstitial Mn in heavily p-type doped GaAs and evidence of its high thermal stability Et al et al. Experiment number IS453 Volume 98